Field-induced charge accumulation in V-groove quantum wires

Inducing charge into V-groove quantum wires via a field effect from a back gate is investigated by solving the Laplace and Poisson equations analytica lly, using a sequence of three conformal mapping transformations. These sol utions show that the V-groove geometry is much more effective than the corr esponding planar geometry. Induced charge densities of order 10(8) m(-1) ar e well within present growth and processing capabilities and offer the pros pect of clean, high-conductivity devices without the need for modulation do ping.