Variation of bandgap with oxygen ambient pressure in MgxZn1-xO thin films grown by pulsed laser deposition

Authors
Misra, P Bhattacharya, P Mallik, K Rajagopalan, S Kukreja, LM Rustagi, KC
Citation
P. Misra et al., Variation of bandgap with oxygen ambient pressure in MgxZn1-xO thin films grown by pulsed laser deposition, SOL ST COMM, 117(11), 2001, pp. 673-677
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE COMMUNICATIONS
ISSN journal
00381098 → ACNP
Volume
117
Issue
11
Year of publication
2001
Pages
673 - 677
Database
ISI
SICI code
0038-1098(2001)117:11<673:VOBWOA>2.0.ZU;2-3
Abstract
Thin films of MgxZn1-xO were grown by pulsed laser deposition technique at various oxygen background pressures in the range of 10(-2)-10(5) Torr on si ngle crystal (0001) alumina substrates, The films were found to be c-axis o riented with a high crystalline quality having FWHM of rocking curve of abo ut 0.16 degrees. The bandgap of Mg(x)Zn(1-)xO thin films was found to incre ase From 3.45 to 3.78 eV with decrease of oxygen pressure from 10(-2) to 10 (-5) Torr during the deposition. This has been attributed to the increase i n the Mg concentration in the films on decreasing the O-2 pressure. (C) 200 1 Elsevier Science Ltd. All rights reserved.