Photoluminescence and micro-imaging study of optically anisotropic InP self-assembled quantum dots

Authors
Sugisaki, M Ren, HW Nishi, K Masumoto, Y
Citation
M. Sugisaki et al., Photoluminescence and micro-imaging study of optically anisotropic InP self-assembled quantum dots, SOL ST COMM, 117(11), 2001, pp. 679-684
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE COMMUNICATIONS
ISSN journal
00381098 → ACNP
Volume
117
Issue
11
Year of publication
2001
Pages
679 - 684
Database
ISI
SICI code
0038-1098(2001)117:11<679:PAMSOO>2.0.ZU;2-4
Abstract
The optical properties of InP self-assembled quantum dots (SADs) were inves tigated under band-to-band excitation of the Ga0.5In0.5P matrix by means of macro- (conventional) and micro-photoluminescence (mu -PL) spectroscopy. W t: clearly observed that the number of bright spots in the mu -PL images of InP SADs depends on the detection energy. reflecting the sire distribution of the SADs. The macro-photoluminescence spectra and mu -PL images of the InP SADs were found to exhibit a strong optical anisotropy with two-fold sy mmetry. which reflects the anisotropic structure of the Ga0.5In0.5P matrix due to the Cu-Pt-B type long-range ordering. (C) 2001 Elsevier Science Ltd. All rights reserved.