Energy distribution of ions bombarding TiO2 thin films during sputter deposition

Citation
N. Martin et al., Energy distribution of ions bombarding TiO2 thin films during sputter deposition, SURF COAT, 138(1), 2001, pp. 77-83
Citations number
28
Categorie Soggetti
Material Science & Engineering
Journal title
SURFACE & COATINGS TECHNOLOGY
ISSN journal
02578972 → ACNP
Volume
138
Issue
1
Year of publication
2001
Pages
77 - 83
Database
ISI
SICI code
0257-8972(20010402)138:1<77:EDOIBT>2.0.ZU;2-U
Abstract
From energy-resolved mass spectrometry, the nature and energy distributions of positive and negative ions impinging on the surface of a growing TiO2 f ilm were investigated as a function of the total pressure P-T. The thin fil ms were deposited by DC reactive magnetron sputtering. A constant argon to oxygen partial pressure ratio P-Ar/P-O2 = 2.5 was used for every deposition , whereas the total pressure P-T = P-Ar + P-O2 was systematically changed f rom 0.15 to 1.5 Pa. The low energy peak (close to 1 eV) of thermalised part icles and the high energy tail (higher than 2-3 eV) of the energy distribut ion of species like Ar+, O+, O-2(+), as well as Ti+ and TiO+, depend strong ly on the variation of the total pressure. Similarly, the influence of the total pressure on microstructure and morphology of the films was examined. X-Ray diffraction analysis shelved that the deposits mainly develop the TiO 2 anatase structure when the total pressure increases. The packing density was calculated from the refractive index of the films with respect to bulk anatase. It decreases from 99 to 92% when P-T changes from 0.15 to 1.5 Pa. The mean energy and relative flux of positive and negative ions were determ ined from their energy distributions, so as to establish some correlation b etween the characteristics of the species bombarding the growing films and the resulting film properties. (C) 2001 Elsevier Science B.V. All rights re served.