Enrichment of Al in the topmost surface of AlN crystalline film prepared by post-irradiation

Authors
Mizuhara, Y Mitsuhashi, R Nagatomi, T Takai, Y Inoue, M Shimizu, R
Citation
Y. Mizuhara et al., Enrichment of Al in the topmost surface of AlN crystalline film prepared by post-irradiation, SURF INT AN, 31(2), 2001, pp. 99-101
Citations number
6
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE AND INTERFACE ANALYSIS
ISSN journal
01422421 → ACNP
Volume
31
Issue
2
Year of publication
2001
Pages
99 - 101
Database
ISI
SICI code
0142-2421(200102)31:2<99:EOAITT>2.0.ZU;2-2
Abstract
Crystalline AIN film that was prepared by post-irradiation under specific c onditions has been examined by reflection high-energy electron diffraction (RHEED) and ion scattering spectroscopy (ISS). The RHEED pattern clearly in dicated that an AlN crystalline structure is grown on an Al substrate under irradiation of 12 keV N-2(+) ions impinged on the Al surface at normal inc idence. However, ISS revealed that the topmost surface is not the stoichiom etric composition corresponding to AlN, but is significantly Al-rich. Copyr ight (C) 2001 John Wiley & Sons, Ltd.