Adsorption sites and STM images of C2H2 on Si(100): a first principles study

Citation
Wa. Hofer et al., Adsorption sites and STM images of C2H2 on Si(100): a first principles study, SURF SCI, 475(1-3), 2001, pp. 83-88
Citations number
16
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028 → ACNP
Volume
475
Issue
1-3
Year of publication
2001
Pages
83 - 88
Database
ISI
SICI code
0039-6028(20010310)475:1-3<83:ASASIO>2.0.ZU;2-4
Abstract
We investigate adsorption energetics and scanning tunnelling microscopy (ST M) imaging of acetylene on Si(1 0 0)(2 x 1) by first principles simulations . The groundstate of chemisorption is the di-sigma configuration. We found two adsorption sites: one on top of a single dimer (adsorption energy 2.97 eV), and one bridging the ends of two dimers (2.87 eV). There are also two fourfold bonded configurations. The molecule is either perpendicular (2.00 eV) or parallel (1.20 eV) to adjacent dimers. STM images are simulated with a first principles method based on the Bardeen integral. We show that the molecule is imaged as a depression and confirm that the contour difference in our simulations between reacted and unreacted sites is equal to experime ntal values. (C) 2001 Elsevier Science B.V. All rights reserved.