Temperature dependence of the photoemission spectra of Si(110) between 300and 1630 K

The valence band GIB) and the 2p core level of the Sill (1 1 0) surface hav e been investigated as a function of the temperature starting from the "16 x 2" reconstruction at room temperature up to 1630 K which is close to the Si melting point (1683 K). The "16 x 2" --> (1 x 1) phase transition at abo ut 1000 K causes a sudden shift of the Si 2p core level spectra. It is asso ciated to a change of the surface band bending and to a change of the surfa ce Si 2p components. The transition is also observed in the VB spectra as a change of their shape and of the emission intensity at the Fermi level. Ot her changes in the surface structure are detected at about 1320 K. No evide nce for a sudden surface melting has been found. (C) 2001 Elsevier Science B.V. All rights reserved.