C-ORIENTED SRBI2NB2O9 FILMS GROWN ON YBA2CU3O7-DELTA SRTIO3 AND NDGAO3/

Authors
BOIKOV YA PRONIN IP SHAPLYGINA TA IVANOV ZG CLAESON T ERTS D
Citation
Ya. Boikov et al., C-ORIENTED SRBI2NB2O9 FILMS GROWN ON YBA2CU3O7-DELTA SRTIO3 AND NDGAO3/, Physics of the solid state, 39(4), 1997, pp. 598-601
Citations number
14
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physics of the solid state → ACNP
ISSN journal
10637834
Volume
39
Issue
4
Year of publication
1997
Pages
598 - 601
Database
ISI
SICI code
1063-7834(1997)39:4<598:CSFGOY>2.0.ZU;2-9
Abstract
Epitaxial SrBi2Nb2O9 films were grown by laser ablation on (001)YBa2Cu 3O7-delta/(100)SrTiO3 and (001)NdGaO3, with c axis normal to the subst rate plane. The SrBi2Nb2O9 films were grown in a layer-by-layer regime on NdGaO3 substrates in 25-Angstrom steps at a condensation temperatu re of 700 degrees C, Microinclusions of secondary phases and a-oriente d grains were observed to exist on the surface of (001)SrBi2Nb2O9 film s grown on (001)YBa2Cu3O7-delta/(100)SrTiO3. The dielectric permittivi ty of the SrBi2Nb2O9 films measured along the c axis is 123 (T = 300 K , f = 100 kHz), and tan delta approximate to 0.04. (C) 1997 American I nstitute of Physics.