EFFECT OF PRESSURE ON THE 2D CARRIER CONCENTRATION IN GASB INAS/GASB QUANTUM-WELL SYSTEM/

Measurements of magnetoresistance and Hall emf have been carried out o n GaSb/InAs/GaSb quantum wells of different thickness and with interfa ces of different types in fields up to 7 T and at pressures up to 2.5 GPa at 4.2 K. The pressure dependence of the electron and hole concent rations was derived by analysis of Shubnikov-de Haas oscillations and magnetoresistance tensor components, made in terms of the classical mo del operating with carriers of two types. It is shown that pressure in itiates a transition from semimetallic to semiconducting regime. (C) 1 997 American Institute of Physics.