Preparation of heteroepitaxial Pb(Mg1/3Nb2/3)O-3 (PMN) thin film by pulsedlaser deposition on Si(001) substrate using La0.5Sr0.5CoO3 (LSCO)/CeO2/YSZtriple buffer

Preparation of heteroepitaxial Pb(Mg1/3Nb2/3)O-3 (PMN) thin films by pulsed laser deposition (PLD) was successful on Si(001) substrate using La0.5Sr0. 5CoO3 (LSCO)/CeO2/YSZ triple buffer structure for the first time. Using thi s triple buffer, the formation of pyrochlore type compounds was completely suppressed. The heteroepitaxial growth of PMN, LSCO, CeO2 and YSZ on Si(001 ) substrate was confirmed by both X-ray pole figure measurement and RHEED o bservation. In this work, the thickness dependency of both crystal structur e and electrical properties of PMN thin film was examined as a function of the thickness of PMN between 1.6 and 130 Mm. The lattice parameter and FWHM (omega scan) of PMN thin films increased with the decrease of the thicknes s of PMN. The current density of PMN thin film was low irrespective of the thickness of PMN (9.2 x 10(-7) and 2.9 x 10(-6) A/cm(2) for 130- and 6.3-nm -thick, respectively Dielectric constant of heteroepitaxial PMN thin film w as decreased with the thickness, which was attributed to the depletion widt h. (C) 2001 Elsevier Science B.V. All rights reserved.