Pulsed laser deposition of epitaxial LaNiO3 thin films on buffered Si(100)

Authors
Sanchez, F Ferrater, C Alcobe, X Bassas, J Garcia-Cuenca, MV Varela, M
Citation
F. Sanchez et al., Pulsed laser deposition of epitaxial LaNiO3 thin films on buffered Si(100), THIN SOL FI, 384(2), 2001, pp. 200-205
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
384
Issue
2
Year of publication
2001
Pages
200 - 205
Database
ISI
SICI code
0040-6090(20010315)384:2<200:PLDOEL>2.0.ZU;2-X
Abstract
Epitaxial LaNiO3(LNO) thin films were deposited on Si(100) substrates by pu lsed laser deposition. (100)-oriented films, without any other orientations , were obtained by using an intermediate double layer of CeO2/YSZ. We studi ed the influence of substrate temperature and oxygen pressure on the crysta l structure and room temperature electrical resistivity of LNO films. Optim al processing conditions allow the growth of LNO films with surface morphol ogy, crystal structure and electrical properties suitable for the use of th e conductive layer as an electrode in ferroelectric capacitors. (C) 2001 El sevier Science B.V. All rights reserved.