Pattern evolution during the growth of CrSi2 layers on Si (111) upon high current pulsed Cr ion implantation

CrSi2 layers were synthesized on Si wafers by high current pulsed Cr ion im plantation into Si wafers with or without a pre-deposited thin Cr overlayer . For the bare Si wafers, at a substrate temperature of 220 degreesC, the p lain and continuous CrSi2 layers were successfully obtained, while at 300 d egreesC, some voids emerged in the formed layers. Interestingly, for the Si wafers with a Cr overlayer, Cr ion implantation induced the growth of surf ace fractal consisting of the CrSi2 grains. It was found that the fractal d imension was independent of the substrate temperature and increased approac hing a Value of 2.0 with increasing ion dose. (C) 2001 Elsevier Science B.V . All rights reserved.