Rapid deposition of hydrogenated microcrystalline silicon by a high current DC discharge

Microcrystalline hydrogenated silicon films (muc-Si:H) have been deposited by a high current DC plasma in argon-silane-hydrogen mixtures at growth rat es up to 10 nm/s and at substrate temperatures below 500 degreesC. Scanning electron microscopy, X-ray diffraction and FTIR analyses show that these f ilms are highly crystallized. The surface morphology depends strongly on th e experimental conditions and varies from a cauliflower structure to a pris matic one. The crystalline orientation of the films also changes with the e xperimental conditions whereas other properties such as crystallite size, c olumnar growth, and crystallinity of the films remain unchanged. (C) 2001 E lsevier Science B.V. All rights reserved.