Low temperature poly-Si TFT-LCD by excimer laser anneal

Authors
Uchikoga, S Ibaraki, N
Citation
S. Uchikoga et N. Ibaraki, Low temperature poly-Si TFT-LCD by excimer laser anneal, THIN SOL FI, 383(1-2), 2001, pp. 19-24
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
383
Issue
1-2
Year of publication
2001
Pages
19 - 24
Database
ISI
SICI code
0040-6090(20010215)383:1-2<19:LTPTBE>2.0.ZU;2-#
Abstract
Excimer laser anneal (ELA) has allowed the production of large-area poly-Si thin-film transistor liquid crystal displays (TFT-LCDs) on a glass substra te. The state of the art of large-area low-temperature TFT-LCDs is reported in this paper. High-performance poly-Si TFTs are expected to achieve vario us applications such as system-on-glass where Various functions are added o n to the display. Possible applications and future trends are discussed tog ether with the technologies required to achieve this goal. (C) 2001 Elsevie r Science B.V. All rights reserved.