The characterization of silicon nitride films by contactless transient photoconductivity measurements

Authors
Kunst, M Abdallah, O Wunsch, F
Citation
M. Kunst et al., The characterization of silicon nitride films by contactless transient photoconductivity measurements, THIN SOL FI, 383(1-2), 2001, pp. 61-64
Citations number
3
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
383
Issue
1-2
Year of publication
2001
Pages
61 - 64
Database
ISI
SICI code
0040-6090(20010215)383:1-2<61:TCOSNF>2.0.ZU;2-O
Abstract
It is shown by non-invasive photoconductivity measurements that the coating of Si wafers by silicon nitride films leads to the increase of number of e xcess charge carriers generated in the silicon substrate by visible light d ue to the antireflection properties of the films. The silicon surface is el ectrically passivated by the deposition of these films on top of it. (C) 20 01 Elsevier Science B.V. All rights reserved.