Ion-beam stimulated solid-phase crystallization of amorphous Si on SiO2

Influences of ion-beam irradiation on solid-phase-crystallization of a-Si o n SiO2 were studied in the temperature range between 200 and 700 degreesC. Significant enhancement of crystal nucleation was observed under ion irradi ation (25 keV, 1 x 10(16) Ar+ cm(-2)). As a result, nucleation at a tempera ture lower than that of the softening of soda-lime glass (450 degreesC) bec omes possible. In addition, nuclei growth along the [111] and [110] directi ons was detected using X-ray diffraction methods. These are a big advantage for the fabrication of high-quality and low-cost thin-film transistors on glass substrates. (C) 2001 Elsevier Science B.V. All rights reserved.