We investigate the polycrystalline microstructure, i.e. grain size and orie
ntation distribution, that forms during laser crystallisation of amorphous
silicon on glass substrates by a frequency doubled Nd:YVO4-laser operating
at a wavelength of 532 nm. Transmission electron microscopy reveals that th
e grains have an average width from 0.25 to 3 mum and a length of several 1
0 mum. Electron back-scattering diffraction indicates that the grain orient
ation of the poly-Si films is textured. Type and extent of texturing depend
in a complex way on the thickness of the crystallised amorphous silicon la
yer and on whether or not a buffer layer is present. (C) 2001 Elsevier Scie
nce B.V. All rights reserved.