Laser processing of amorphous silicon for large-area polysilicon imagers

Pulsed excimer-laser processing of amorphous silicon on non-crystalline sub strates allows for the fabrication of high-quality polysilicon materials an d thin-film transistors (TFTs). Under optimized processing conditions, thes e polysilicon TFTs have high mobilities, sharp turn-on, low off-state leaka ge currents and good spatial uniformity. These improved parameters, particu larly the low off-state leakage currents and good uniformity, enable, not o nly displays, but also the more demanding hat-panel imaging arrays to be fa bricated in polysilicon, and results on an imager are presented. (C) 2001 E lsevier Science B.V. All rights reserved.