High mobility thin film transistors by Nd : YVO4-laser crystallization

Laser crystallization of amorphous silicon is one of the most interesting w ays to obtain high-quality polycrystalline silicon films on glass. We cryst allized the channel region of n- and p-type thin film transistors (TFTs) wi th a frequency-doubled Nd:YVO4 laser utilizing a sequential lateral solidif ication process. The high repetition rate of the laser of up to 100 kHz all ows for high scanning speeds of up to 5 cm s(-1). The laser irradiation was performed in air at room temperature. The resulting polycrystalline films showed longitudinally elongated grains with a length of up to 100 mum in th e scanning direction of the laser beam and a width of up to 2 mum perpendic ular to the scanning direction. Due to the anisotropic grain dimensions, th e TFT performance depends on the orientation of the channel with respect to the scanning direction. Furthermore, a scale down of the TFT dimensions re sults in a better device performance because the number of grain boundaries within the channel of a TFT is reduced. For example, a decrease in the wid th W and length L of the channel from W = 63 and L = 22 mum to W = 30 and L = 15 mum increases the field-effect electron mobility TFT of the TFTs from mu (N) = 410 to 510 cm(2) V-1 s(-1). The high mobility mu and low sub-thre shold slope S = 0.45 V decade(-1) obtained with a gate oxide thickness of 1 00 nm show the high quality of laser-crystallized polycrystalline silicon. (C) 2001 Elsevier Science B.V. All rights reserved.