On the growth mechanism of a-Si : H

Authors
Kessels, WMM Smets, AHM Marra, DC Aydil, ES Schram, DC van de Sanden, MCM
Citation
Wmm. Kessels et al., On the growth mechanism of a-Si : H, THIN SOL FI, 383(1-2), 2001, pp. 154-160
Citations number
37
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
383
Issue
1-2
Year of publication
2001
Pages
154 - 160
Database
ISI
SICI code
0040-6090(20010215)383:1-2<154:OTGMOA>2.0.ZU;2-M
Abstract
The kinetic growth model for hydrogenated amorphous silicon (a-Si:H) from S iH4 radicals in SiH4 plasmas is reviewed on the basis of recently obtained experimental and computational data. New surface reactions are considered a nd their implications for the a-Si:H film growth mechanism are discussed. F urthermore, from the experimentally observed substrate temperature-dependen ce of the bulk hydrogen content and the composition of the a-Si:H surface h ydrides, it is concluded that surface processes play an important role in h ydrogen elimination from the him during growth. (C) 2001 Elsevier Science B .V. All rights reserved.