Large area microcrystalline silicon films grown by ECR-CVD

Authors
Ferrero, S Mandracci, P Cicero, G Giorgis, F Pirri, CF Barucca, G
Citation
S. Ferrero et al., Large area microcrystalline silicon films grown by ECR-CVD, THIN SOL FI, 383(1-2), 2001, pp. 181-184
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
383
Issue
1-2
Year of publication
2001
Pages
181 - 184
Database
ISI
SICI code
0040-6090(20010215)383:1-2<181:LAMSFG>2.0.ZU;2-6
Abstract
We report on the structural, optical and electrical properties of undoped m icrocrystalline silicon films deposited by ECR-CVD technique. In detail, fi lms with a crystallinity fraction larger than 60%, optical absorption spect ra close to those of monocrystalline silicon, deposition rate higher than 1 Angstrom /s and electron mobility of approximately 50 cm(2)/V s have been obtained at substrate temperatures ranging from 200 to 300 degreesC. (C) 20 01 Elsevier Science B.V. All rights reserved.