Plasma oxidation of silicon using an electron cyclotron wave resonance (ECWR) oxygen plasma

Authors
Lai, DF Robertson, J Milne, WI
Citation
Df. Lai et al., Plasma oxidation of silicon using an electron cyclotron wave resonance (ECWR) oxygen plasma, THIN SOL FI, 383(1-2), 2001, pp. 220-223
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
383
Issue
1-2
Year of publication
2001
Pages
220 - 223
Database
ISI
SICI code
0040-6090(20010215)383:1-2<220:POOSUA>2.0.ZU;2-G
Abstract
A high plasma density system, the electron cyclotron wave resonance (ECWR) has been used for the room temperature plasma oxidation of silicon. The oxi dation efficiency, defined in terms of the ratio of initial growth rate to total anodisation current, is very high. The quality of the oxide as measur ed by refractive index, infra-red spectra and composition is compared to th at of thermally grown silicon dioxide. (C) 2001 Elsevier Science B.V. All r ights reserved.