Influence of the process parameters on structural and electrical properties of r.f. magnetron sputtering ITO films

This paper presents results of the role of the oxygen concentration (C-O) a nd the deposition pressure (p(d)) on structural and electrical properties o f indium tin oxide films produced by r.f, magnetron sputtering. The films w ere annealed in air, followed by a reannealed stage in hydrogen, aiming to improve the film's transparency and conductivity. The results achieved show that the films texture grain size, structure and compactness is more influ enced by C-O than by P-d, the same does not happen with the electrical prop erties. (C) 2001 Elsevier Science B.V. All rights reserved.