Optical and electrical properties of silicon nanocrystals formed by CW laser irradiation of amorphous silicon oxides

Citation
Mc. Rossi et al., Optical and electrical properties of silicon nanocrystals formed by CW laser irradiation of amorphous silicon oxides, THIN SOL FI, 383(1-2), 2001, pp. 267-270
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
383
Issue
1-2
Year of publication
2001
Pages
267 - 270
Database
ISI
SICI code
0040-6090(20010215)383:1-2<267:OAEPOS>2.0.ZU;2-B
Abstract
Optical and electrical properties of silicon nanocrystals formed by CW lase r-treated hydrogenated amorphous silicon-oxygen alloys have been investigat ed as a function of the irradiation time, for different laser power densiti es and alloy compositions. Raman scattering measurements indicate that lase r irradiation yields a mixed phase structure consisting of silicon nanocrys tals (Si-nc) embedded in an oxygen-rich amorphous matrix. It is shown that both photoluminescence (PL) and electrical characteristics clearly reflect this phase separation, resulting in a wavelength-dependent PL excitation an d spectral features. Largely different conduction paths related to carrier transport within Si-nc and intergrain oxide are also detected. (C) 2001 Els evier Science B.V. All rights reserved.