In this work a study of the influence of the annealing treatment (atmospher
e and temperature) on the properties of zinc oxide thin films (intrinsic an
d doped with indium and aluminum) prepared by spray pyrolysis is presented.
The result shows that the type of atmosphere (reduction or oxidant) has an
important role in the changes observed in the structural, electrical and o
ptical properties of the ZnO thin films. The ZnO thin film doped with indiu
m, presents the lowest resistivity (rho = 5.8 x 10(-3) Omega cm) associated
to a high transmittance (T = 86%), characteristics required for applicatio
n on optoelectronic devices. (C) 2001 Elsevier Science B.V. All rights rese
rved.