Silicidation in chromium-amorphous silicon multilayer films

Citation
A. Bouabellou et al., Silicidation in chromium-amorphous silicon multilayer films, THIN SOL FI, 383(1-2), 2001, pp. 296-298
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
383
Issue
1-2
Year of publication
2001
Pages
296 - 298
Database
ISI
SICI code
0040-6090(20010215)383:1-2<296:SICSMF>2.0.ZU;2-9
Abstract
Chromium silicide formation from chromium/amorphous silicon multilayer thin films was investigated using differential scanning calorimetry (DSC) and t ransmission electron microscopy (TEM). The chromium and amorphous silicon t hin films were RF sputtered without breaking the vacuum onto unheated monoc rystalline NaCl substrates at a deposition rate of similar to 1 Angstrom /s . The nominal ratio of the layer thicknesses, silicon-to-chromium, was appr oximately 3.3:1. The thermograms, realized at two different scanning rates between room temperature and 600 degreesC, revealed a small peak at similar to 300 degreesC and a strong peak at similar to 500 degreesC. The TEM inve stigation showed that the small and the main DSC peaks were attributed to t he nucleation of the CrSi2 phase and the growth of the same phase, respecti vely. (C) 2001 Elsevier Science B.V. All rights reserved.