Spontaneous ridge-structure formation and large field emission of heavily Si-doped AlN

Authors
Kasu, M Kobayashi, N
Citation
M. Kasu et N. Kobayashi, Spontaneous ridge-structure formation and large field emission of heavily Si-doped AlN, APPL PHYS L, 78(13), 2001, pp. 1835-1837
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
13
Year of publication
2001
Pages
1835 - 1837
Database
ISI
SICI code
0003-6951(20010326)78:13<1835:SRFALF>2.0.ZU;2-Q
Abstract
Sharp ridge structures with a 3 nm wide (0001) top facet and {1 (1) over ba r 01} sidewall facets formed on the surface of a heavily Si-doped AlN layer on a 6H-SiC (0001) substrate during metalorganicvapor-phase-epitaxy growth . This is caused by {1 (1) over bar 01} facet growth induced by heavy Si do ping. We obtained a large field emission (FE) current density of 11 mA/cm(2 ) at 84 V/mum. One of the reasons for the large FE is that the ridge-struct ure formation decreases the energy barrier necessary for FE by about 2.4 eV . (C) 2001 American Institute of Physics.