Formation of the TiSi(2)C40 as an intermediate phase during the reaction of the Si/Ta/Ti system

Authors
La Via, F Mammoliti, F Corallo, G Grimaldi, MG Migas, DB Miglio, L
Citation
F. La Via et al., Formation of the TiSi(2)C40 as an intermediate phase during the reaction of the Si/Ta/Ti system, APPL PHYS L, 78(13), 2001, pp. 1864-1866
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
13
Year of publication
2001
Pages
1864 - 1866
Database
ISI
SICI code
0003-6951(20010326)78:13<1864:FOTTAA>2.0.ZU;2-W
Abstract
The effect of a thin Ta layer at the Si/Ti interface on the intermediate ph ase formation has been studied in detail by in situ sheet resistance, x-ray diffraction, transmission electron microscopy and Rutherford backscatterin g spectroscopy of partially reacted samples. When a Ta layer is deposited a t the Si/Ti interface, a new intermediate phase has been detected, i.e. the hexagonal TiSi2 C40. This phase grows on the C40-TaSi2 that is formed at t he interface with silicon. The lattice parameters of the C40-TiSi2 obtained by ab initio calculations agree quite well with the experimental ones. (C) 2001 American Institute of Physics.