Relaxation oscillation phenomena in cryogenic Si diodes

Authors
Merz, BP Treumann, RA
Citation
Bp. Merz et Ra. Treumann, Relaxation oscillation phenomena in cryogenic Si diodes, APPL PHYS L, 78(13), 2001, pp. 1876-1878
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
13
Year of publication
2001
Pages
1876 - 1878
Database
ISI
SICI code
0003-6951(20010326)78:13<1876:ROPICS>2.0.ZU;2-X
Abstract
We present observations of unusual oscillatory behavior of Si diodes at low temperatures. The oscillations observed are stable, highly reproducible an d obey a frequency-current relation that is linear over nearly eight decade s in current strength allowing for precision measurement of currents over t he whole range down to picoampere currents. (C) 2001 American Institute of Physics.