Dielectric studies of ZnSe1-xTex epilayers

We present the results of experimental investigations on dielectric propert ies of ZnSe1-xTex epilayers by capacitance and dissipation factor at temper ature 5 K <T < 475 K and frequency 20 Hz <f <1 MHz. A Debye-like relaxation of dielectric behavior has been observed, which is found to be a thermally activated process. The activation energies obtained from capacitance and d issipation factor are in very good agreement. The activation energies decre ase with the increase of Se content, and range from 662 to 819 meV. The res ults are described by means of the four-center model, in which the number o f different atoms occupying the nearest-neighbor sites of defects results i n a different activation energy. (C) 2001 American Institute of Physics.