MOCVD of Al2O3 films using new dialkylaluminum acetylacetonate precursors:Growth kinetics and process yields

Dimethyl, diethyl, and di-iso-butyl aluminum acetylacetonate compounds were synthesized to deposit Al2O3 thin films by low-pressure metal-organic (LP- MO)CVD. Alumina films were grown in the temperature range 400-520 degreesC under an oxygen or water vapor atmosphere. A kinetic model was applied to a nalyze the experimental data and to compare the properties of the three pre cursors. The model, supported by in-line Fourier transform infrared (FTIR) measurements, clearly distinguished the rate-determining steps of the heter ogeneous process, with kinetic constants correlated to the molecular struct ure of the precursors. A method of optimizing deposition conditions, on the basis of the uniformity of the obtained thin films, is discussed.