Epitaxial electrodeposition of copper(I) oxide on single-crystal copper

Epitaxial thin films of copper(I) oxide (Pn3m, a = 0.427 nm) were electrode posited onto [110]-, [111]-, and [100]-oriented single-crystal copper (Fm3m , a = 0.3615 nm) by reduction of copper(II) lactate in solution. Cu2O films grown on Cu(110) and Cu(III) exhibited both an out-of- and in-plane orient ation following that of the substrate as measured by 2 theta and azimuthal X-ray scans, up to a thickness of 0.8 mum. X-ray diffraction studies showed that Cu2O films deposited onto Cu(100) grow initially with a near-[III] or ientation up to a critical thickness, beyond which film growth is primarily in the [100] direction. The films were found to be both in- and out-of-pla ne oriented throughout, as measured by azimuthal X-ray scans. In situ 2 the ta X-ray measurements showed a critical thickness for growth in the [100] d irection of about 360 nm. As determined from scanning electron microscopy i mages, the Cu2O films deposited onto Cu(100) grew with triangular facets co nsistent with the [III] orientation prior to the critical thickness, and th en as pyramidal islands over the initial triangular layers above this thick ness. A proposed interface model of Cu2O(III) over Cu(100) yields a low mis match and a high number of atomic contact points per unit area, offering a possible explanation for the initial [III]-oriented deposition.