Self-tuning MOCVD approach to the growth of very smooth La1-xPbxMnO3 and PbTiO3 epitaxial thin films

The approach to the growth of stoichiometric lead-containing complex oxide films was developed. It was successfully used for the MOCVD of La1-xPbxMnO3 (x = 0.1-0.6) and PbTiO3 films on perovskite substrates and MgO at a depos ition rate of approximate to1 mum/h. The grown films were of a good epitaxi al duality with rather low mean surface roughness, S-a < 2 nm (for the film thickness <greater than or equal to>250-600 nm). The grown manganite layer s were metallic at room temperature with a T-c above 300 K. Such films are suitable for the fabrication of low-field tunnel magnetoresistance devices and thin film capacitors.