Effect of misorientation angle on the photoluminescence spectra of Si (delta)-doped GaAs (111)A layers grown by molecular beam epitaxy

Authors
Galiev, GB Mokerov, VG Khabarov, YV
Citation
Gb. Galiev et al., Effect of misorientation angle on the photoluminescence spectra of Si (delta)-doped GaAs (111)A layers grown by molecular beam epitaxy, DOKL PHYS, 46(2), 2001, pp. 88-91
Citations number
12
Categorie Soggetti
Physics
Journal title
DOKLADY PHYSICS
ISSN journal
10283358 → ACNP
Volume
46
Issue
2
Year of publication
2001
Pages
88 - 91
Database
ISI
SICI code
1028-3358(200102)46:2<88:EOMAOT>2.0.ZU;2-K