Effect of misorientation angle on the photoluminescence spectra of Si (delta)-doped GaAs (111)A layers grown by molecular beam epitaxy

Citation
Gb. Galiev et al., Effect of misorientation angle on the photoluminescence spectra of Si (delta)-doped GaAs (111)A layers grown by molecular beam epitaxy, DOKL PHYS, 46(2), 2001, pp. 88-91
Citations number
12
Categorie Soggetti
Physics
Journal title
DOKLADY PHYSICS
ISSN journal
10283358 → ACNP
Volume
46
Issue
2
Year of publication
2001
Pages
88 - 91
Database
ISI
SICI code
1028-3358(200102)46:2<88:EOMAOT>2.0.ZU;2-K