Increasing bonded wafer yield by acoustic micro imaging (AMI)

Authors
Citation
T. Adams, Increasing bonded wafer yield by acoustic micro imaging (AMI), ELECTRO ENG, 73(890), 2001, pp. 20
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONIC ENGINEERING
ISSN journal
00134902 → ACNP
Volume
73
Issue
890
Year of publication
2001
Database
ISI
SICI code
0013-4902(200103)73:890<20:IBWYBA>2.0.ZU;2-P
Abstract
A major defect concern in fusion-bonded wafer pairs, as well as in wafers b onded by other methods, is the presence of a void or micro-voids between th e two wafers. Although a void may be very small in area and extremely thin, it can still have devastating impact on device performance. Among companie s involved in bonding wafers, usually for MEMS or analogue device applicati ons, the tolerance for such voids is zero.