Epitaxial crystallization of keV-ion-bombarded alpha quartz

In this article, our results on the epitaxial crystallization of ion-bombar ded crystalline silicon dioxide (alpha quartz) are reviewed. The epitaxial recrystallization of amorphized layers was achieved after alkali irradiatio n and annealing in air in the temperature range 650-875 degreesC. The syste matic behavior of alkali ions in enhancing the regrowth rate both with decr easing ion size and increasing concentration is shown. The role of oxygen i n the recrystallization was investigated by means of nuclear reaction analy sis, by performing thermal treatments of the samples in O-18. A large amoun t of O-18 diffuses inside the amorphous layer in the alkali-ion implanted s amples at 600-800 degreesC. From the strong correlation between the migrati on of O-18 and implanted alkali, it was possible to gain further insights i nto the recrystallization mechanism. (C) 2001 American Institute of Physics .