We report on a study of the morphological evolution of InAs layers grown on
GaAs (001) substrates by molecular-beam epitaxy under In-rich conditions.
The surface morphology of the InAs layers is characterized by a feature of
island-pit combinations. We show that the vertical sizes of the islands and
pits can grow simultaneously beyond the average layer thickness, up to sev
eral hundred nanometers. The composition of the islands is found to be tern
ary InxGa1-xAs rather than the expected binary InAs due to intermixing of t
he layer and substrate materials. We determine that this intermixing is cau
sed by dissociation of the exposed GaAs at the pits, followed by migration
of excess Ga atoms and their incorporation into the islands. The density of
the island-pit combinations keeps nearly constant for different layer thic
knesses. Eventually, as the layer grows beyond a certain thickness, the pit
s are filled up by the expanding islands, forming a nearly pure island morp
hology at the growth front. (C) 2001 American Institute of Physics.