1/f noise in metal-oxide-semiconductor transistors biased in weak inversion

An approach to model 1/f noise in the weak inversion range of metal-oxide-s emiconductor transistors (MOST) is proposed, based on Hooge's theory (mobil ity fluctuation model). Starting from conduction equations in the subthresh old regime, a method to evaluate the total number of carriers under the gat e is presented and allows us to deduce the Hooge parameter alpha (H). This model is applied to p-channel MOSTs. With the proposed model, the value of alpha (H) obtained in weak inversion is quite similar to this extracted in strong inversion allowing a unique description of the 1/f noise. (C) 2001 A merican Institute of Physics.