Effect of emitter metallization on thermal properties of small AlGaAs heterojunction bipolar transistors

Authors
Kleckner, TC Reid, AR St Denis, AR Jackson, MK
Citation
Tc. Kleckner et al., Effect of emitter metallization on thermal properties of small AlGaAs heterojunction bipolar transistors, J APPL PHYS, 89(7), 2001, pp. 4195-4197
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
89
Issue
7
Year of publication
2001
Pages
4195 - 4197
Database
ISI
SICI code
0021-8979(20010407)89:7<4195:EOEMOT>2.0.ZU;2-Z
Abstract
We have extended an experimental technique to measure thermal resistance by pulsed current-voltage measurements to small bipolar transistors with ther mal time constants of several hundred nanoseconds. Results for a 3x3 mum(2) AlGaAs/GaAs heterojunction bipolar transistor are compared with detailed f inite element method simulations, and show good agreement when heat flow in to the emitter metallization is accounted for. Simulation results indicate that emitter metallization plays a significant role in reducing temperature nonuniformity across the emitter. (C) 2001 American Institute of Physics.