Surface reactions of atomic and molecular nitrogen (N-2) with liquid group
III metals: Al, Ga, and In has been investigated by quantum mechanical calc
ulations in density functional theory (DFT) formulation, using cluster repr
esentation of metal surface. It has been shown that the N-2 molecule dissoc
iates during adsorption on the surfaces of liquid group III metals. The N-2
dissociation energy barriers are equal to 3.0 eV, 3.4 eV, and 3.6 eV for A
l, Ga, and In, respectively. They are much smaller that the dissociation en
ergy of free N-2 molecule, equal to 9.76 eV. It has been also determined th
at the adsorption of N-2 on surface of liquid Al is an exothermic and on Ga
and In is an endothermic process. These results are consistent with experi
mentally observed combustion of liquid Al in high pressure of nitrogen and
the absence of combustion of both Ga and In. The process of dissolution of
N atoms adsorbed on liquid Al surface has been also analyzed. The energy ba
rriers for the direct jump of the N adatom from the surface position into t
he liquid Al interior is equal to 1.3 eV. This suggests that the dissolutio
n of N in liquid Al proceeds not by direct jumps of N adatoms into the liqu
id interior but by Brownian motion of clusters consisting of these adatoms
and neighboring Al atoms. The results of the calculations indicate that nit
rogen solution in liquid group III metals consists of single N atoms strong
ly attached to the surrounding Me atoms. (C) 2001 American Institute of Phy
sics.