Atomic layer epitaxy of ZnTe by isothermal closed space sublimation

Atomic layer epitaxy growth of ZnTe films is achieved using a novel isother mal closed-space sublimation system with elemental sources. X-rays, electro n diffraction and optical measurements indicated the epitaxial quality of t he films and confirmed a self-regulated atomic layer epitaxy regime. As the procedure is near equilibrium, the self-regulation mechanism is different from that occurring in other techniques like molecular beam epitaxy. In the present case, the difference in vapor pressures between the elemental sour ce and the growing surface is the driving force for the growth; this differ ence being zero once the surface is completely covered. (C) 2001 Elsevier S cience B.V. All rights reserved.