Growth of oriented BN films prepared by electron cyclotron resonance CVD

Authors
Zhang, SJ Chen, GH Wang, B Zhang, DX Yan, H
Citation
Sj. Zhang et al., Growth of oriented BN films prepared by electron cyclotron resonance CVD, J CRYST GR, 223(4), 2001, pp. 545-549
Citations number
30
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
223
Issue
4
Year of publication
2001
Pages
545 - 549
Database
ISI
SICI code
0022-0248(200103)223:4<545:GOOBFP>2.0.ZU;2-2
Abstract
Oriented hBN films with their (0 0 0 2) basal plane lying on Si (1 0 0) sub strate were prepared by electron cyclotron resonance chemical vapour deposi tion technique. Fourier transform infrared spectroscopy (FTIR) measurement shows that in this case the absorption peak of the B-N-B out-of-plane mode disappeared. X-ray diffraction result confines the orientation. The morphol ogy by atomic force microscopy is also shown. (C) 2001 Elsevier Science B.V . All rights reserved.