Several carbide-doped (SiC, TiC, V8C7, WC, ZrC) graphites have been produce
d. The erosion of these materials at low-energy (eV) hydrogen ion bombardme
nt has been investigated using the weight-loss method, mass spectroscopy, i
on beam analysis, and scanning electron microscopy (SEM). The erosion yield
s of the WC- and V8C7-doped graphites are reduced by a factor of 2 for 30 e
V D at 300 K compared to pure graphite. This observed reduction is partly a
ttributed to surface enrichment of carbide due to preferential C erosion. T
he other part is assigned to changes in the chemical erosion process (Y-sur
f) as well as at elevated temperatures in the thermal activated process (Y-
therm). The reduction of both erosion processes is determined for all dopan
ts to be more than 25% of the erosion yield of the undoped graphite. (C) 20
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