Citation
E. Vainonen-ahlgren et al., Silicon diffusion in amorphous carbon films, J NUCL MAT, 290, 2001, pp. 216-219
Citations number
32
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
JOURNAL OF NUCLEAR MATERIALS
ISSN journal
00223115
→ ACNP
Volume
290
Year of publication
2001
Pages
216 - 219
Database
ISI
SICI code
0022-3115(200103)290:<216:SDIACF>2.0.ZU;2-A
Abstract
Annealing behavior of implanted silicon in amorphous carbon films deposited
by a pulsed are discharge method was studied. Raman spectroscopy was used
to characterize the changes in the bonding structure after annealing. The c
oncentration profiles of Si were measured by secondary ion mass spectrometr
y (SIMS). The obtained diffusion coefficients resulted in an activation ene
rgy of 1.6+/-0.1 eV and pre-exponential factor of 1.9 x 10(4+/-1) nm(2) s(-
1). (C) 2001 Elsevier Science B.V. All rights reserved.