Depth profiles of D atoms and D-2 molecules in a W single crystal implanted
with 6 keV D ions at 300 K have been determined using secondary ion mass s
pectrometry (SIMS) and residual gas analysis (RGA) measurements in the cour
se of surface sputtering. Profiles of deuterium and lattice damage in a W s
ingle crystal irradiated with 10 keV D ions at 300 K have been investigated
by means of nuclear reaction analysis (NRA) and Rutherford backscattering
spectrometry combined with ion channelling techniques (RBS/C), There are at
least two types of ion-induced defects which are responsible for trapping
of deuterium: (i) D-2-filled microvoids (deuterium bubbles) localised in th
e implantation zone; and (ii) dislocations which are distributed from the s
urface to depths far beyond 1 mum and which capture deuterium in the form o
f D atoms. (C) 2001 Elsevier Science B.V. All rights reserved.