Transparent conductive ZnO thin films prepared by plasma-enhanced CVD: Effect of aluminum dopant

Authors
Kondo, K Ohgishi, A Tanaka, Z
Citation
K. Kondo et al., Transparent conductive ZnO thin films prepared by plasma-enhanced CVD: Effect of aluminum dopant, KAG KOG RON, 27(2), 2001, pp. 282-284
Citations number
6
Categorie Soggetti
Chemical Engineering
Journal title
KAGAKU KOGAKU RONBUNSHU
ISSN journal
0386216X → ACNP
Volume
27
Issue
2
Year of publication
2001
Pages
282 - 284
Database
ISI
SICI code
0386-216X(200103)27:2<282:TCZTFP>2.0.ZU;2-8
Abstract
Zinc oxide is a promising material for the transparent electrodes and ultra violet lasers. Zinc oxide thin films were prepared by plasma-enhanced CVD. Minimum resistivity of 9.7x10(-4) Ohm .cm was obtained at substrate temper ature of 400 degreesC. The ZnO film having large grain size showed high mob ility and low resistivity.