In situ spectroscopic ellipsometry monitoring of multilayer growth dynamics via molecular layer epitaxy

Citation
V. Burtman et al., In situ spectroscopic ellipsometry monitoring of multilayer growth dynamics via molecular layer epitaxy, LANGMUIR, 17(7), 2001, pp. 2137-2142
Citations number
50
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
LANGMUIR
ISSN journal
07437463 → ACNP
Volume
17
Issue
7
Year of publication
2001
Pages
2137 - 2142
Database
ISI
SICI code
0743-7463(20010403)17:7<2137:ISSEMO>2.0.ZU;2-V
Abstract
Real time monitoring of organic monolayer self-assembly by molecular layer epitaxy (MLE) processes was studied by in situ spectroscopic ellipsometry t echniques. For the MLE of imide-based organic heterostructures using chemis orption of 3,4,7,8-naphthalenetetracarboxylic dianhydride (NTCDA) and 1,6-d iamino-n-hexane (DAH) on prefunctionalized surfaces, in situ ellipsometry r eveals that the reaction kinetics can be best fitted to an S-shaped deposit ion curve with saturated coverage of about 20 min by the Langmuir-Hinshelwo od model, with a slow initial phase, followed by a faster second phase. The rate of deposition at each moment is proportional to the number of empty s ites multiplied by the number of occupied sites. Calculated deposition rate constants for every pulse are k(T) = 5.6 x 10(-5) s(-1) for first depositi on of NTCDA on a template (T-layer), decreasing to k(A) = 1.5 x 10(-5) s(-1 ) for NTCDA and to k(B) = 7.2 x 10(-6) s(-1) for DAH assembly pulses corres pondingly. A modified Rudzinski-Aharoni kinetic model for adsorption that c orrelates adsorption energy with valid numbers of reactive sites was used t o estimate an equilibrium surface absorption energy of 16 kcal for a NTCDA layer and 29 kcal for a DAH layer.