High-temperature spreading-resistance profiling for the characterization of impurity distributions in n-type silicon

We have developed the technique of high-temperature spreading-resistance pr ofiling (HT-SRP) for the characterization of electrically active impurities or defects in semiconductors. As a major feature, HT-SRP together with the well-established SRP method at room temperature combines the accurate reso lution of an impurity profile with a determination of the defect states tha t control the electronic properties of the semiconductor. Some basic aspect s of this technique are demonstrated on Si samples diffused with sulfur or selenium. (C) 2001 Elsevier Science Ltd. All rights reserved.