High-resolution scanning capacitance microscopy by angle bevelling

Scanning capacitance microscopy was performed on bevelled samples to improv e the resolution. The dependence of the reverse junction carrier spilling o n the bevel angle has been investigated for P and B ion-implanted Si sample s. We show an increase of this effect decreasing the bevel angle from 5 deg rees 44 ' to 1 degrees9 '. Moreover, the depletion region amplitude measure d on the bevelled surface is narrower than on the cross section. We have al so studied the spilling dependence on the dopant profile shape and we have found that it increases with the profile slope decreasing in the low concen tration region near the junction. (C) 2001 Elsevier Science Ltd. All rights reserved.