Simulation of scanning capacitance microscopy measurements on micro-sectioned and bevelled n(+)-p samples

Authors
Ciampolini, L Giannazzo, F Ciappa, M Fichtner, W Raineri, V
Citation
L. Ciampolini et al., Simulation of scanning capacitance microscopy measurements on micro-sectioned and bevelled n(+)-p samples, MAT SC S PR, 4(1-3), 2001, pp. 85-88
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
ISSN journal
13698001 → ACNP
Volume
4
Issue
1-3
Year of publication
2001
Pages
85 - 88
Database
ISI
SICI code
1369-8001(200102/06)4:1-3<85:SOSCMM>2.0.ZU;2-M
Abstract
In this work we compare simulations of SCM measurements on bevelled and mic ro-sectioned samples for investigating the impact of the carrier spilling e ffect. Simulation results are validated by experimental data obtained from dedicated samples calibrated by spreading resistance profiling. We show tha t 3D-based direct inversion of data measured on micro-sectioned bipolar sam ples results into a good quantitative agreement with the experimental sprea ding resistance profile in the area where carrier spilling is negligible. 2 D-based simulations of bevelled bipolar samples reproduce qualitatively the measured SCM profiles. These results lead to the conclusion that also in t he case of SCM, the lateral resolution in junction delineation can be impro ved by characterizing bevelled samples. (C) 2001 Elsevier Science Ltd. All rights reserved.